| PART |
Description |
Maker |
| TG2016SAN |
LOW VOLTAGE HIGH STABILITY
|
Epson Company
|
| CES2305 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2302 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| M4500 |
HIGH RELIABILITY FOR LOW COST TEMPERATURE STABILITY OF -1 PPM AVAILABLE
|
PETERMANN-TECHNIK
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| AP2122AK-1.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR 高速，超低噪音LDO稳压
|
BCD Semiconductor Manufacturing, Ltd.
|
| AMS3406 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| SP6260CEK-L/TR SP6260AEK-L/TR SP6260BEK-L/TR SP626 |
High Speed, Extremely Low Noise 150mA LDO Regulator
|
Sipex Corporation
|
